To elucidate ALD mechanisms through metrology, especially in situ measurements, and through modeling of growth chemistry.
To synthesise new chemical precursors and use them in thin film deposition experiments to find viable ALD processes for materials where no process exists at present.
To achieve control of interfaces through ALD, understanding nucleation, depositing onto 2D materials and developing new approaches to selective-area ALD.
To develop and integrate ALD processes for oxides, sulfides and nitrides for applications in transparent electronics, memristors, light emitting devices and nanosensors, in collaboration with industry.
To develop processes for the molecular layer deposition (MLD) of hybrid organic/inorganic films, along with optimization of material properties.