Atomic Layer Deposition (ALD)

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The conformal growth of Atomic Layer Deposition (ALD) processes enables functional films on sophisticated 3D substrates like nanowires, nanotubes and nanoporous materials. The coating of such nanoscale structures is an emerging technology for the development of novel materials, devices and...Read more

In this collaboration we aim to explore guanidinate precursors [(Me2N)C(NiPr)2]xM(NMe2)3-x, where M = Al, Ga or In for low temperature CVD and ALD of group 13 nitrides (AlN, GaN, InN and their alloys). Precursors will be synthesized by the Barrylab at Carleton University, Ottawa, Canada and...Read more

The collaboration between Laboratory of Inorganic Chemistry – University of Helsinki, Finland, and CNR-MDM-IMM, Italy, had the aim to develop  a novel ALD recipe for thin film MoO3 deposition by using a novel molybdenum b-diketonate type precursor.

The growth of Molybdenum oxide by...Read more

News item

Virtual Project on the History of ALD (VPHA), started in July 2013, is looking fore more voluntary participants, to help find answers to questions related to early days of ALD. Many will know that ALD has been invented twice under different names, Atomic Layer Epitaxy and Molecular Layering....Read more

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