Scientific content of the collaboration:
Crystalline HfS2 and SnS2 thin films are 2D materials which are regarded to be highly promising candidates for the implementation in a plethora of electronic devices as they exhibit extraordinarily high charge carrier mobilities and beneficial, small band gaps respectively. Atomic Layer Deposition (ALD) has been proven to be one of the most suitable techniques for the deposition of thin films, yet the fabrication of HfS2 and SnS2 thin films by this approach has rarely been studied and little is known about suitable precursors and process conditions.
Within the Short Term Scientific Mission (STSM) two precursors, one for each respective material system, which belong to precursor classes that have not been tested in thermal ALD of metal sulfides, will be synthesized and studied as to their thermal properties in detail by the Inorganic Materials Chemistry (ICM) group of Prof. Anjana Devi at Ruhr University Bochum. Joined examination of the compounds in deposition test runs at the University of Helsinki in cooperation with the group of Prof Mikko Ritala depicts the second chapter of the project.
The research for the STSM of David Zanders and Miika Matinnen at the University of Helsinki seeks to obtain further insight into precursor and process design requirements for the successful deposition of aforementioned 2D materials.