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CHRISTOPHE VALLEE received the PhD degree in physics from the University of Nantes, France, in 1999. During its thesis he worked on PECVD of SiO2 materials from organosilicon precursors in helicon plasma reactor. From 1999 to 2001 he joined as an associate professor the Laboratory for Electrostatics and Dielectric Materials (LEMD) at the Joseph Fourier University where he worked on the deposition and characterization of Diamond-Like Carbon (DLC) materials deposited from a Distributed Electron Cyclotron Resonance plasma reactor and he also developed a Plasma Based Ion Implantation (PBII) process. Since end of 2001 he has been at the Microelectronics Technology Laboratory (LTM) where he obtained in 2010 a full professor position. LTM is located on the Minatec Centre, Grenoble, a major French center for innovation and expertise in micro and nanotechnology. As such, it takes benefit from a world-class environment dedicated to microelectronics and nanotechnologies. Through its position LTM has collaborations with leading semiconductor and equipment manufacturers (ST Microelectronics, Applied Materials…) and participates in several national and European projects. His current research interests focus on the deposition (mainly PECVD and PEALD) and characterization of insulators used in microelectronics, such as high k oxides for integrated MIM capacitors and metal oxides for non-volatile resistive memories (RRAM), GST (GeSbTe) materials for Phase Change Memories, metal gate deposition for CMOS devices, and passivation layers for electronic devices. A large part of this work is made in collaboration with STMicroelectronics and CEA/LETI on 200 mm and 300 mm industrial tools. He is at the head of a joint research laboratory between LTM and STMicroelectronics and he is also at the head of the Material department of Polytech Grenoble (French Engineer School of Grenoble Alpes University).