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Ibrahim Yilmaz worked photoluminescence spectroscopy of GaN based quantum structures and light emitting diodes (LED) during his PhD study at Rensselaer Polytechnic Institute (RPI), Troy, New York. Then he continued his research on GaInN multi-quantum well based LEDs in green region as postdoctoral research associate at RPI. After moving to Sweden, he set micro photoluminescence spectroscopy laboratory to characterize III-V semiconductor nanostructures including single nanowires and nanowire based devices in Lund Nano Lab facility at Lund University. Since April 2011 he has been working in the Department of Electrical and Electronics at Turgut Ozal University. At the same time, he is doing research on wide band gap nano materials which may be used as light sources and solar cells at Institute of Materials and Nanotechnology (UNAM) as guest researcher. Recently he has been working on III-nitride nanostructures by ALD on Si.